參數(shù)資料
型號: 2SA838
廠商: PANASONIC CORP
元件分類: 小信號晶體管
英文描述: Silicon PNP epitaxial planer type(For high-frequency amplification Complementary to 2SC1359)
中文描述: 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-92-B1, 3 PIN
文件頁數(shù): 1/2頁
文件大?。?/td> 37K
代理商: 2SA838
1
Transistor
2SA838
Silicon PNP epitaxial planer type
For high-frequency amplification
Complementary to 2SC1359
I
Features
G
High transition frequency f
T
.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
JEDEC:TO–92
EIAJ:SC–43A
5.0
±
0.2
4.0
±
0.2
5
±
0
1
±
0
0.45
+0.2
0.45
+0.2
1.27
1.27
2
±
0
2.54
±
0.15
2
1
3
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Ratings
–30
–20
–5
–30
250
150
–55 ~ +150
Unit
V
V
V
mA
mW
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Transition frequency
Noise figure
Reverse transfer impedance
Common emitter reverse transfer
capacitance
Symbol
I
CBO
I
CEO
I
EBO
h
FE*
V
CE(sat)
V
BE
f
T
NF
Z
rb
C
re
Conditions
V
CB
= –10V, I
E
= 0
V
CE
= –20V, I
B
= 0
V
EB
= –5V, I
C
= 0
V
CE
= –10V, I
C
= –1mA
I
C
= –10mA, I
B
= –1mA
V
CE
= –10V, I
C
= –1mA
V
CB
= –10V, I
E
= 1mA, f = 200MHz
V
CB
= –10V, I
E
= 1mA, f = 5MHz
V
CE
= –10V, I
C
= –1mA, f = 2MHz
V
CE
= –10V, I
C
= –1mA,
f = 10.7MHz
min
70
150
typ
– 0.1
– 0.7
300
2.8
22
1.2
max
– 0.1
–100
–10
220
4.0
50
2.0
Unit
μ
A
μ
A
V
V
MHz
dB
pF
*
h
FE
Rank classification
Rank
B
C
h
FE
70 ~ 140
110 ~ 220
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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