參數(shù)資料
型號: 2SA2061
廠商: Toshiba Corporation
英文描述: Silicon PNP Epitaxial Type
中文描述: 硅外延式進步黨
文件頁數(shù): 4/5頁
文件大?。?/td> 169K
代理商: 2SA2061
2SA2061
2001-10-29
4
Collector-emitter voltage V
CE
(V)
C
C
r
th
– t
w
Pulse width t
w
(s)
T
r
t
Curves should be applied in thermal limited area.
Single nonrepetitive pulse Ta
=
25°C
Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
1000
1
0.001
100
10
0.01
0.1
1
10
100
1000
Safe Operating Area
10
0.01
0.1
1
10
100
0.1
1
IC max (pulsed)
DC operation
*
(Ta
=
25°C)
: Single nonrepetitive pulse
Ta
25°C
Note that the curves for
100 ms
*
, 10 s
*
and DC
operation
*
will be different when
the devices aren’t mounted on
an FR4 board (glass epoxy,
1.6 mm thick, Cu area:
645 mm
). These characteristic
curves must be derated linearly
with increase in temperature.
V
100
μ
s
1 ms
100 ms
*
10 ms
10 s
*
IC max (continuous)
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