- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371480 > 2SA2065 (Toshiba Corporation) TOSHIBA Transistor Silicon PNP Epitaxial Type PDF資料下載
參數(shù)資料
| 型號： | 2SA2065 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Transistor Silicon PNP Epitaxial Type |
| 中文描述： | 東芝晶體硅外延式進步黨 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 135K |
| 代理商： | 2SA2065 |
2SA2065
2001-10-29
1
TOSHIBA Transistor Silicon PNP Epitaxial Type
2SA2065
High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
High DC current gain: h
FE
= 200 to 500 (I
C
=
0.
1
5 A)
Low collector-emitter saturation voltage: V
CE (sat)
=
0.
1
4 V (max)
High-speed switching: t
f
= 37 ns (typ.)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
V
CBO
20
V
Collector-emitter voltage
V
CEO
20
V
Emitter-base voltage
V
EBO
7
V
DC
I
C
1.5
Collector current
Pulse
I
CP
2.5
A
Base current
I
B
150
mA
t = 10 s
750
Collector power
dissipation
DC
P
C
(Note 1)
500
mW
Junction temperature
T
j
150
°C
Storage temperature range
T
stg
55 to 150
°C
Note 1: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:
645 mm
2
)
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
I
CBO
V
CB
=
20 V, I
E
= 0
―
―
100
nA
Emitter cut-off current
I
EBO
V
EB
=
7 V, I
C
= 0
―
―
100
nA
Collector-emitter breakdown voltage
V
(BR) CEO
I
C
=
10 mA, I
B
= 0
20
―
―
V
h
FE
(1)
V
CE
=
2 V, I
C
=
0.15 A
200
―
500
DC current gain
h
FE
(2)
V
CE
=
2 V, I
C
=
0.5 A
125
―
―
Collector-emitter saturation voltage
V
CE (sat)
I
C
=
0.5 A, I
B
=
17 mA
―
―
0.14
V
Base-emitter saturation voltage
V
BE (sat)
I
C
=
0.5 A, I
B
=
17 mA
―
―
1.10
V
Rise time
t
r
―
40
―
Storage time
t
stg
―
135
―
Switching time
Fall time
t
f
See Figure 1 circuit diagram.
V
CC
≈
10 V, R
L
= 20
I
B1
= I
B2
=
17 mA
―
37
―
ns
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-3S1A
Weight: 0.01 g (typ.)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SA2066 | High-Speed Switching, DC-DC Converter Applications |
| 2SA2067 | Silicon PNP epitaxial planar type |
| 2SA2069 | High-Speed Switching Applications DC-DC Converter Applications |
| 2SA2070 | TOSHIBA Transistor Silicon PNP Epitaxial Type |
| 2SA2074 | Silicon PNP epitaxial planar type(Industrial equipments such as DC-DC converters) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA2065(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 20V 1.5A hfe200-500 37ns |
| 2SA2065_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications Strobe Applications |
| 2SA2066 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications |
| 2SA2066(TE12L,F) | 制造商:Toshiba 功能描述:PNP 制造商:Toshiba America Electronic Components 功能描述:Transistor PNP 10V 2A hfe200-500 25ns PW |
| 2SA2066_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:High-Speed Switching Applications DC-DC Converter Applications |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。