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參數(shù)資料
| 型號： | 2SA684 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 中文描述： | 1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | ROHS COMPLIANT, SC-51, TO-92L-A1, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 99K |
| 代理商： | 2SA684 |
Transistors
2SA0683
(2SA683)
, 2SA0684
(2SA684)
Silicon PNP epitaxial planar type
1
Publication date: February 2004
SJC00001CED
For low-frequency power amplification and driver amplification
Complementary to 2SC1383, 2SC1384
■
Features
Allowing supply with the radial taping
■
Absolute Maximum Ratings
T
a
=
25
°
C
■
Electrical Characteristics
T
a
=
25
°
C
±
3
°
C
5.9
±
0.2
0.7
±
0.1
4.9
±
0.2
8
±
0
0
+
–
1
±
0
2.54
±
0.15
(
(1.27)
(1.27)
0.45
+0.2
0.45
+0.2
1
3
2
Unit: mm
1: Emitter
2: Collector
3: Base
EIAJ: SC-51
TO-92L-A1 Package
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.*1: Pulse measurement
*2: Rank classification
Rank
Q
R
S
h
FE
85 to 170
120 to 240
170 to 340
Parameter
Symbol
Rating
Unit
Collector-base voltage
(Emitter open)
2SA0683
V
CBO
30
60
25
50
5
1
1.5
V
2SA0684
Collector-emitter voltage
(Base open)
2SA0683
V
CEO
V
2SA0684
Emitter-base voltage (Collector open)
V
EBO
V
Collector current
I
C
I
CP
A
Peak collector current
A
Collector power dissipation
P
C
1
W
Junction temperature
T
j
T
stg
150
°
C
°
C
Storage temperature
55 to
+
150
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-base voltage
(Emitter open)
2SA0683
V
CBO
I
C
=
10
μ
A, I
E
=
0
30
60
25
50
5
V
2SA0684
Collector-emitter voltage
(Base open)
2SA0683
V
CEO
I
C
=
2 mA, I
B
=
0
V
2SA0684
Emitter-base voltage (Collector open)
V
EBO
I
E
=
10
μ
A, I
C
=
0
V
CB
=
20 V, I
E
=
0
V
CE
=
10 V, I
C
=
500 mA
V
CE
=
5 V, I
C
=
1 A
I
C
=
500 mA, I
B
=
50 mA
I
C
=
500 mA, I
B
=
50 mA
V
CB
=
10 V, I
E
=
50 mA, f
=
200 MHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
V
Collector-base cutoff current (Emitter open)
Forward current transfer ratio
*1
I
CBO
h
FE1 *2
h
FE2
0.1
μ
A
85
340
50
Collector-emitter saturation voltage
V
CE(sat)
0.2
0.85
0.4
1.20
V
Base-emitter saturation voltage
V
BE(sat)
f
T
C
ob
V
Transition frequency
200
MHz
Collector output capacitance
(Common base, input open circuited)
20
30
pF
Note) The part numbers in the parenthesis show conventional part number.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SA0719 | For low-frequency power amplification and driver amplification Complementary |
| 2SA0720 | For low-frequency power amplification and driver amplification Complementary |
| 2SA0720A | For low-frequency driver amplification Complementary |
| 2SA0777 | For low-frequency driver amplification Complementary |
| 2SA0794 | Silicon PNP epitaxial planar type |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SA684_09 | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| 2SA684_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:PNP Plastic Encapsulated Transistor |
| 2SA684G-X-AB3-R | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| 2SA684G-X-T9N-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
| 2SA684G-X-T9N-K | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:PNP SILICON TRANSISTOR |
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