參數(shù)資料
型號: 2SA886
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary)
中文描述: 1.5 A, 40 V, PNP, Si, POWER TRANSISTOR, TO-126
封裝: ROHS COMPLIANT, TO-126B-A1, 3 PIN
文件頁數(shù): 2/5頁
文件大小: 95K
代理商: 2SA886
2SA0886
2
SJD00003BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
V
CER
R
BE
I
CEO
T
a
0
160
40
120
80
0
1.6
1.2
0.8
0.4
C
C
Ambient temperature T
a
(
°
C)
0
–10
–2
–4
–8
–6
0
–4.0
–3.5
–3.0
–2.5
–2.0
–1.5
–1.0
–0.5
T
C
=25C
I
B
=–40mA
–5mA
–10mA
–15mA
–20mA
–25mA
–30mA
–35mA
C
C
Collector-emitter voltage V
CE
(V)
–0.01
–0.01
–0.1
–1
–10
–0.1
–1
I
C
/I
B
=10
T
C
=100C
25C
–25C
C
C
Collector current I
C
(A)
–0.01
–0.01
–1
–0.1
–0.1
–1
–10
T
C
=–25C
25C
100C
I
C
/I
B
=10
B
B
Collector current I
C
(A)
1
–1
–0.1
10
100
1000
V
CE
=–5V
T
C
=100C
25C
–25C
F
F
Collector current I
C
(A)
0.01
0.1
1
10
0
240
200
160
120
80
40
T
T
Emitter current I
E
(A)
V
CB
=–5V
f=200MHz
T
C
=25C
–1
–10
–100
0
20
40
60
80
100
120
140
I
E
=0
f=1MHz
T
C
=25C
C
o
Collector-base voltage V
CB
(V)
0
–60
–50
–40
–30
–20
–10
0.01
0.1
1
10
T
C
=25C
Base-emitter resistance R
BE
(k
)
C
C
1
1000
100
10
0
120
20
100
40
80
60
Ambient temperature T
a
(
°
C)
V
CE
=–12V
I
C
a
)
I
C
a
=
°
C
相關(guān)PDF資料
PDF描述
2SA0900 For low-frequency Power amplification Complementary
2SA0914 For audio system/pli drive
2SA0921 For high breakdown voltage low-noise amplification Complementary
2SA0963 For low-frequency power amplification
2SA1013 TO 92MOD PLASTIC ENCAPSULATE TRANSISTORS
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SA886P 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126
2SA886Q 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126
2SA886R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | TO-126
2SA887 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon PNP Power Transistors
2SA888 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-92-25V -.05A .35W EBC