參數(shù)資料
型號(hào): 2SB0766A
廠商: PANASONIC CORP
元件分類: 小信號(hào)晶體管
英文描述: Silicon PNP epitaxial planer type(For low-frequency output amplification)
中文描述: 1000 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ROHS COMPLIANT, MINIP3-F1, 3 PIN
文件頁數(shù): 2/2頁
文件大?。?/td> 39K
代理商: 2SB0766A
2
Transistor
2SB766, 2SB766A
0
160
40
120
80
140
20
100
60
0
1.4
1.2
0.4
1.0
0.8
0.2
0.6
Printed circut board: Copper
foil area of 1cm
2
or more, and
the board thickness of 1.7mm
for the collector portion.
Ambient temperature Ta (C)
C
C
0
–10
–8
–2
–6
–4
0
–1.50
–1.25
–1.00
– 0.75
– 0.50
– 0.25
Ta=25C
I
B
=–10mA
–9mA
–1mA
–2mA
–3mA
–4mA
–5mA
–6mA
–7mA
–8mA
Collector to emitter voltage V
CE
(V)
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
–25C
Ta=75C
25C
C
C
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100
I
C
/I
B
=10
Ta=–25C
75C
25C
B
B
– 0.01
– 0.1
–1
–10
– 0.03
Collector current I
C
(A)
– 0.3
–3
600
500
400
300
200
100
V
CE
=–10V
Ta=75C
25C
–25C
F
F
1
3
10
30
100
0
200
160
120
80
40
180
140
100
60
20
V
=–10V
Ta=25C
Emitter current I
E
(mA)
T
T
–1
Collector to base voltage V
CB
(V)
–3
–10
–30
–100
0
50
40
30
20
10
45
35
25
15
5
I
=0
f=1MHz
Ta=25C
C
o
– 0.01
Collector to emitter voltage V
CE
(V)
– 0.1
–1
–10
– 0.03
– 0.3
–3
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
Single pulse
Ta=25C
t=10ms
t=1s
I
CP
I
C
2
2
C
C
P
C
— Ta
I
C
— V
CE
V
CE(sat)
— I
C
V
BE(sat)
— I
C
h
FE
— I
C
f
T
— I
E
C
ob
— V
CB
Area of safe operation (ASO)
相關(guān)PDF資料
PDF描述
2SB0767 Silicon PNP epitaxial planer type
2SB767 Silicon PNP epitaxial planer type(For low-frequency output amplification)
2SB0774 Silicon PNP epitaxial planer type(For low-frequency amplification)
2SB774 Silicon PNP epitaxial planer type(For low-frequency amplification)
2SB0779 For low-frequency output amplification
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