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參數(shù)資料
| 型號： | 2SB0792A |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon PNP epitaxial planer type |
| 中文描述： | 50 mA, 185 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236 |
| 封裝： | ROHS COMPLIANT, MINI3-G1, SC-59, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 37K |
| 代理商： | 2SB0792A |
1
Transistor
2SB792, 2SB792A
Silicon PNP epitaxial planer type
For high breakdown voltage low-noise amplification
Complementary to 2SD814
I
Features
G
High collector to emitter voltage V
CEO
.
G
Low noise voltage NV.
G
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Emitter
3:Collector
JEDEC:TO–236
EIAJ:SC–59
Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65
±
0.15
0.65
±
0.15
3
1
2
0
0
1
±
0
0
+
–
1
+
–
0
0.4
±
0.2
0
0
+
–
1
0.1 to 0.3
2
+
–
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
–150
–185
–150
–185
–5
–100
–50
200
150
–55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SB792
2SB792A
2SB792
2SB792A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to emitter
voltage
Emitter to base voltage
Forward current
transfer ratio
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Noise voltage
Symbol
I
CBO
V
CEO
V
EBO
h
FE*
V
CE(sat)
f
T
C
ob
NV
Conditions
V
CB
= –100V, I
E
= 0
I
C
= –100
μ
A, I
B
= 0
I
E
= –10
μ
A, I
C
= 0
V
CE
= –5V, I
C
= –10mA
I
C
= –30
μ
A, I
B
= –3mA
V
CB
= –10V, I
E
= 10mA, f = 200MHz
V
CB
= –10V, I
E
= 0, f = 1MHz
V
CE
= –10V, I
C
= –1mA, G
V
= 80dB,
R
g
= 100k
, Function = FLAT
min
–150
–185
–5
130
130
typ
200
4
150
max
–1
450
330
–1
Unit
μ
A
V
V
V
MHz
pF
mV
Marking symbol :
I
(2SB792)
2F
(2SB792A)
*
h
FE
Rank classification
Rank
R
S
T
h
FE
130 ~ 220
185 ~ 330
260 ~ 450
2SB792
IR
IS
IT
2SB792A
2FR
2FS
—
Marking
Symbol
2SB792
2SB792A
2SB792
2SB792A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB792 | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB792A | Silicon PNP epitaxial planer type(For high breakdown voltage low-noise amplification) |
| 2SB0792 | For High Breakdown Voltage Low-noise Amplification |
| 2SB0819 | For Low-Frequency Output Amplification |
| 2SB0928 | For Power Amplification |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0792A(2SB792A) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號デバイス － 小信號トランジスタ － 汎用低周波増幅 |
| 2SB0792AR | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
| 2SB0792ARL | 功能描述:TRANS PNP LN AMP 185VCEO SC-59 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB0792AS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 185V V(BR)CEO | 50MA I(C) | TO-236AB |
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