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參數(shù)資料
| 型號(hào)： | 2SB0819 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | For Low-Frequency Output Amplification |
| 中文描述： | 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | M-A1, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 81K |
| 代理商： | 2SB0819 |
2SB0819
2
SJC00059BED
V
BE(sat)
I
C
h
FE
I
C
f
T
I
E
P
C
T
a
I
C
V
CE
V
CE(sat)
I
C
C
ob
V
CB
V
CER
R
BE
I
CEO
T
a
0
160
40
120
80
140
20
Ambient temperature T
a
(
°
C)
100
60
0
1.2
1.0
0.8
0.6
0.4
0.2
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
C
C
0
10
8
2
6
4
0
4.0
3.0
1.0
2.5
3.5
2.0
0.5
1.5
T
a
=
25
°
C
I
B
=
40 mA
30 mA
25 mA
20 mA
15 mA
10 mA
35 mA
5 mA
C
C
Collector-emitter voltage V
CE
(V)
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
=
10
T
a
=
25
°
C
75
°
C
25
°
C
B
B
Collector current I
C
(A)
0.01
0.1
1
10
0
600
500
400
300
200
100
V
CE
=
5 V
T
a
=
75
°
C
25
°
C
25
°
C
F
F
Collector current I
C
(A)
0.01
0.1
1
10
0
240
200
160
120
80
40
V
CB
=
5 V
T
a
=
25
°
C
T
T
Emitter current I
E
(A)
1
10
100
0
150
120
60
90
30
I
E
=
0
f
=
1 MHz
T
a
=
25
°
C
Collector-base voltage V
CB
(V)
C
o
0
0.01
0.1
1
10
60
50
40
30
20
10
T
a
=
25
°
C
Base-emitter resistance R
BE
(k
)
C
C
0
120
100
80
20
60
40
1
1000
100
10
V
CE
=
12 V
Ambient temperature T
a
(
°
C)
I
C
a
)
I
C
a
=
°
C
0.01
0.1
1
10
0.01
0.1
1
10
100
I
C
/ I
B
=
10
T
a
=
75
°
C
25
°
C
25
°
C
C
C
Collector current I
C
(A)
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PDF描述 |
|---|---|
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB0819(2SB819) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
| 2SB0819Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB0819R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 1.5A I(C) | SC-71 |
| 2SB082020MAJL | 制造商:SILAN 制造商全稱:Silan Microelectronics Joint-stock 功能描述:SCHOTTKY BARRIER DIODE CHIPS |
| 2SB083040ML | 制造商:SILAN 制造商全稱:Silan Microelectronics Joint-stock 功能描述:SCHOTTKY BARRIER DIODE CHIPS |
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