參數(shù)資料
型號(hào): 2SB1326TV2R
元件分類: 小信號(hào)晶體管
英文描述: 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: ATV, 3 PIN
文件頁(yè)數(shù): 2/5頁(yè)
文件大?。?/td> 107K
代理商: 2SB1326TV2R
2SB1386 / 2SB1412 / 2SB1326
Transistors
Rev.A
2/4
Absolute maximum ratings (Ta=25
°C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
1 Single pulse, Pw=10ms
2 When mounted on a 40×40×0.7 mm ceramic board.
3 Printed circuit board glass epoxy board 1.6 mm thick with copper plating 100mm2or larger.
Parameter
VCBO
VCEO
VEBO
PC
Tj
Tstg
30
V
A(DC)
°C
20
6
5
IC
A(Pulse)
10
1
3
2
0.5
2W
W
1
10
W(Tc
=25
°C)
1W
2SB1386
2SB1412
2SB1326
150
55 to 150
Symbol
Limits
Unit
Electrical characteristics (Ta=25
°C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-emitter saturation voltage
Output capacitance
Measured using pulse current.
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
30
20
6
82
2SB1386,2SB1412
2SB1326
120
0.35
60
0.5
390
1.0
VIC
= 50
A
IC
= 1mA
IE
= 50
A
VCB
= 20V
VEB
= 5V
VCE
= 2V, IC= 0.5A
IC/IB
= 4A/ 0.1A
VCE
= 6V, IE=50mA, f=100MHz
VCB
= 20V, IE=0A, f=1MHz
V
A
120
390
V
MHz
pF
Typ.
Max.
Unit
Conditions
Transition frequency
Packaging specifications and hFE
Package
Code
Taping
Basic ordering
unit (pieces)
T100
TL
1000
2500
PQR
hFE
2SB1386
TV2
2500
PQR
2SB1412
QR
2SB1326
Type
hFE values are classified as follows :
Item
P
Q
R
hFE
82 to 180
120 to 270
180 to 390
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