- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49908 > 2SB1326TV2R 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SB1326TV2R |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ATV, 3 PIN |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 107K |
| 代理商： | 2SB1326TV2R |
2SB1386 / 2SB1412 / 2SB1326
Transistors
Rev.A
3/4
Electrical characteristic curves
Fig.1
Grounded emitter propagation
characteristics
COLLECTOR
CURRENT
:
I
C
(A)
BASE TO EMITTER VOLTAGE : VBE
(V)
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1m
2m
5m
10m
20m
200m
100m
50m
500m
1
2
10
5
VCE
=
2V
25
°C
25
°C
Ta
=100
°C
Fig.2
Grounded emitter output
characteristics
COLLECTOR
CURRENT
:
I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
0
0.4
0.8
1.2
1.6
2.0
1
2
3
5
4
0
IB
=0A
20mA
25mA
30mA
10mA
5mA
15mA
Ta
=25
°C
50mA
45mA
40mA
35mA
Fig.3
DC current gain vs.
collector current ( )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
Ta=25
°C
2V
VCE=
5V
1V
1m
5m 0.01
0.05
1 2 5 10
2m
100
200
500
1k
2k
5k
50
20
10
5
0.02
0.1
0.5
0.2
Fig.4 DC current gain vs.
collector current ( )
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
VCE
= 1V
1m
5m 0.01
0.05
1 2
5 10
2m
100
200
500
1k
2k
5k
50
20
10
5
0.02
0.1
0.5
0.2
25
°C
25
°C
Ta
=100
°C
Fig.5 DC current gain vs.
collector current (
)
DC
CURRENT
GAIN
:
h
FE
COLLECTOR CURRENT : IC
(A)
1m
5m 0.01
0.05
1 2
5 10
2m
100
200
500
1k
2k
5k
50
20
10
5
0.02
0.1
0.5
0.2
25
°C
25
°C
Ta
=100
°C
VCE
= 2V
Fig.6
Collector-emitter saturation
voltage vs. collector current ( )
IC/IB
=50/1
/1
Ta
=25°C
40/1
30/1
10/1
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
1 2 5 10
0.0-0.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
Fig.7
Collector-emitter saturation
voltage vs. collector current ( )
Ta
=100°C
25
°C
lC/lB
=10
25°C
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
1 2 5 10
0.010.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
Fig.8
Collector-emitter saturation
voltage vs. collector current (
)
Ta
=100°C
25°C
25
°C
lC/lB
=30
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
1 2 5 10
0.010.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
Fig.9 Collector-emitter saturation
voltage vs. collector current (
)
Ta
=100°C
25°C
25
°C
lC/lB
=40
COLLECTOR
SATURATION
VOLTAGE
:
V
CE(sat)
(V)
COLLECTOR CURRENT : IC
(A)
1 2
5 10
0.010.02
0.1 0.2 0.5
0.05
2m 5m
0.01
2
1
0.5
0.2
0.1
0.05
0.02
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SB1326TV2/Q | 5000 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 2SB1329T105 | 1 A, 32 V, PNP, Si, POWER TRANSISTOR |
| 2SB1329T105R | 1 A, 32 V, PNP, Si, POWER TRANSISTOR |
| 2SB1329T105P | 1 A, 32 V, PNP, Si, POWER TRANSISTOR |
| 2SB1335A/F | 4 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-220FP |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SB1333 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1333N | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SB1341 | 制造商:Distributed By MCM 功能描述:SUB ONLY ROHM TRANSISTOR TO-220AB -480V -4A 40W BCE |
| 2SB1344 | 功能描述:TRANS DARL PNP 100V 8A TO-220FP RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> 晶體管(BJT) - 單路 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時(shí)的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉(zhuǎn)換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應(yīng)商設(shè)備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SB1346 | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR TO-220AB -60V -3A 30W BCE |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。