2
2SC5191
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 5 V, I
E
= 0
100
nA
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
100
nA
DC Current Gain
h
FE
V
CE
= 1 V, I
C
= 3 mA
Note 1
80
160
Insertion Power Gain (1)
S
21e
2
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
2.5
3.5
dB
Insertion Power Gain (2)
S
21e
2
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
6.5
dB
Noise Figure (1)
NF
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
1.7
2.5
dB
Noise Figure (2)
NF
V
CE
= 3 V, I
C
= 7 mA, f = 2.0 GHz
1.5
dB
Gain Bandwidth Product (1)
f
T
V
CE
= 1 V, I
C
= 3 mA, f = 2.0 GHz
4
4.5
GHz
Gain Bandwidth Product (2)
f
T
V
CE
= 3 V, I
C
= 20 mA, f = 2.0 GHz
8.5
GHz
Collector Capacitance
C
re
V
CB
= 1 V, I
E
= 0, f = 1.0 MHz
Note 2
0.75
0.85
pF
Notes 1.
Pulse Measurement: PW
≤
350
μ
s, Duty cycle
≤
2 %, Pulsed
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
Classification
Rank
FB
Marking
T88
h
FE
80 to 160