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參數(shù)資料
| 型號(hào)： | 2SC5663T2L |
| 英文描述： | TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 500MA I(C) | SOT-416VAR |
| 中文描述： | 晶體管|晶體管|叩| 12V的五（巴西）總裁| 500mA的一（c）|的SOT - 416VAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 62K |
| 代理商： | 2SC5663T2L |
2SC5585 / 2SC5663
Transistors
Low frequency transistor (50V, 2A)
2SC5585 / 2SC5663
The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes.
!
Applications
For switching
For muting
!
Features
1) High current.
2) Low VCE(sat).
VCE(sat)
≤ 250mV at IC = 200mA / IB = 10mA
!
External dimensions (Units : mm)
ROHM : EMT3
EIAJ : SC-75A
JEDEC : SOT-416
2SC5585
Abbreviated symbol : BX
ROHM : VMT3
2SC5663
(1) Base
(2) Emitter
(3) Collector
(1) Emitter
(2) Base
(3) Collector
0.7
0.15
0.1Min.
0.55
0~0.1
0.2
1.6
1.0
0.3
0.8
(2)
0.5
(3)
0.2
(1)
0~0.1
(3)
0.32
0.8
1.2
0.13
0.5
0.22
0.4
1.2
0.8
0.2
0.15Max.
0.2
(2)
(1)
!
Absolute maximum ratings (Ta=25
°C)
Parameter
Collectot-base voltage
Collector-emitter voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
VCBO
VCEO
IC
PC
Tj
Tstg
15
V
mA
mW
°C
12
500
ICP
A
1
150
55~+150
Symbol
Limits
Unit
Single pulse Pw = 1ms
!
Electrical characteristics (Ta=25
°C)
Parameter
Collector-base breakdown voltage
Collectoe-emitter brakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BVCBO
BVCEO
BVEBO
ICBO
hFE
VCE(sat)
Cob
Min.
15
12
6
270
90
7.5
100
680
250
VIC = 10
A
IC = 1mA
IE = 10
A
VCB = 15V
VCE = 2V, IC = 10mA
IC/IB = 200mA/10mA
VCB = 10V, IE = 0A, f = 1MHz
V
nA
mV
fT
320
VCE = 2V, IE =
10mA, f = 100MHz
MHz
pF
Typ.
Max.
Unit
Conditions
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