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參數資料
| 型號： | 2SC5704 |
| 英文描述： | Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay |
| 中文描述： | 晶體管 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 63K |
| 代理商： | 2SC5704 |
NE662M16
NPN SILICON HIGH
FREQUENCY TRANSISTOR
M16
HIGH GAIN BANDWIDTH: fT = 25 GHz
LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz
HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz
NEW LOW PROFILE M16 PACKAGE:
Flat Lead Style with a height of just 0.50mm
FEATURES
DESCRIPTION
The NE662M16 is fabricated using NEC's UHS0 25 GHz fT
wafer process. With a typical transition frequency of 25 GHz
the NE662M16 is usable in applications from 100 MHz to over
10 GHz. The NE662M16 provides excellent low voltage/low
current performance.
NEC's new low profile/flat lead style "M16" package is ideal for
today's portable wireless applications. The NE662M16 is an
ideal choice for LNA and oscillator requirements in all mobile
communication systems.
PART NUMBER
NE662M16
EIAJ1 REGISTERED NUMBER
2SC5704
PACKAGE OUTLINE
M16
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
ICBO
Collector Cutoff Current at VCB = 5V, IE = 0
nA
200
IEBO
Emitter Cutoff Current at VEB = 1 V, IC = 0
nA
200
hFE
Forward Current Gain2 at VCE = 2 V, IC = 5 mA
50
70
100
fT
Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz
GHz
20
25
MSG
Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
20
|S21E|2
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
dB
14
17
NF
Noise Figure at VCE = 2 V, IC = 5 mA, f = 2 GHz, ZIN = ZOPT
dB
1.1
1.5
P1dB
Output Power at 1 dB compression point at
VCE = 2 V, IC = 20 mA, f = 2 GHz
dBm
11
IP3
Third Order Intercept Point at VCE = 2 V, IC = 20 mA, f = 2 GHz
22
Cre
Feedback Capacitance3 at VCB = 2 V, IC = 0, f = 1 MHz
pF
0.14
0.24
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width ≤ 350 s, duty cycle ≤ 2 %.
3. Capacitance is measured by capacitance meter (automatic balance bridge method) when emitter pin is connected to the guard pin.
4. MSG =
DC
RF
S21
S12
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相關代理商/技術參數 |
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|---|---|
| 2SC5706-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-H | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-P-E | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-P-TL-E | 功能描述:兩極晶體管 - BJT RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SC5706-TL-E | 功能描述:兩極晶體管 - BJT BIP NPN 5A 50V RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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