參數(shù)資料
型號(hào): 2SC6061
廠商: Toshiba Corporation
英文描述: Silicon NPN Epitaxial Type
中文描述: npn型硅外延式
文件頁(yè)數(shù): 4/5頁(yè)
文件大小: 212K
代理商: 2SC6061
2SC6061
2006-11-13
4
1000
1
0.001
1000
0.01
0.1
1
10
100
10
100
T
r
t
r
th
– t
w
Pulse width t
w
(s)
Curves apply only to limited areas of
thermal resistance.
Single non-repetitive pulse Ta
=
25°C
Mounted on an FR4 board (glass-epoxy;
1.6 mm thick; Cu area, 645 mm
2
)
Safe Operating Area
0.001
10
0.1
10
1000
1
0.01
1
100
0.1
VCEO max
パルス
)*
IC max (pulsed)
連続
)
*
Ta = 25 °C
100 ms
*
1 ms
10 s
*
10
μ
s
10 ms
100 ms
Collector -emitter voltage V
CE
(V)
C
C
Single non-repetitive pulse
Ta
=
25°C
Note that the curves for 100
ms, 10 s and DC operation
will be different when the
devices aren’t mounted on an
FR4 board (glass-epoxy, 1.6
mm thick, Cu area: 645 mm
2
).
Single-device operation
These characteristic curves
must be de-rated linearly with
μ
s
DC operation
(continuous)
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