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參數(shù)資料
| 型號(hào)： | 2SK2981 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 59K |
| 代理商： | 2SK2981 |
The information in this document is subject to change without notice.
1998
MOS FIELD EFFECT TRANSISTOR
2SK2981
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D12355EJ1V0DS00 (1st edition)
December 1998 NS CP(K)
PACKAGE DRAWING (Unit : mm)
TO-251(MP-3)
1. Gate
2. Drain
3. Source
4. Fin (Drain)
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
0.6 ±0.1
0.6 ±0.1
1.3
MAX.
1
1
2 3
5
7
M
1
M
2.32.3
0
4
6.5 ±0.2
5.0 ±0.2
2.3 ±0.2
0.5 ±0.1
1
4
M
0
1.3
MAX.
2.3 2.3
1 2
3
4
5
1
1
+
–
1
+
–
MAX.
MAX.
0.8
0
1
M
1
1. Gate
2. Drain
3. Source
4. Fin (Drain)
TO-252(MP-3Z) (SURFACE MOUNT TYPE)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
Low on-resistance
R
DS(on)1
= 27 m
(MAX.) (V
GS
= 10 V, I
D
= 10 A)
R
DS(on)2
= 40 m
(MAX.) (V
GS
= 4.5 V, I
D
= 10 A)
R
DS(on)3
= 50 m
(MAX.) (V
GS
= 4 V, I
D
= 10 A)
Low C
iss
: C
iss
= 860 pF (TYP.)
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK2981
TO-251
2SK2981-Z
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0)
V
GSS
±20
V
Drain Current (DC)
Drain Current (Pulse)
Note
I
D(DC)
±20
A
I
D(pulse)
±80
A
Total Power Dissipation (T
c
= 25 °C)
P
T
20
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
–55 to + 150
°C
Note
PW
≤
10
μ
s, Duty cycle
≤
1 %
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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