參數(shù)資料
型號(hào): 2SK2981
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 3/8頁(yè)
文件大小: 59K
代理商: 2SK2981
Data Sheet D12355EJ1V0DS00
3
2SK2981
TYPICAL CHARACTERISTICS (T
A
= 25 °C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
T
C
- Case Temperature -
C
d
0
20
40
60
80
100
120
140
160
20
40
60
80
100
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
C
P
T
0
20
40
60
80
100
120
140
160
35
30
25
20
15
10
5
FORWARD BIAS SAFE OPERATING AREA
V
DS -
Drain to Source Voltage - V
I
D
0.1
0.1
1
10
100
1
10
100
T
C
= 25
C
Single Pulse
Powe DsspaionLmted
I
D(DC)
=20
A
R
=10V
(a V
GS
PW=500
μ
s
PW=10ms
PW=1ms
I
D(PULSE)
=80
A
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
0
2
3
4
60
100
1
Pulsed
V
GS
=10.0 V
20
4.5 V
4.0 V
40
80
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
1
10
100
1000
Pulsed
0
2
4
T
A
=
25
C
25
C
75
C
125
C
6
8
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