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參數(shù)資料
| 型號： | 2SK2981 |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關(guān)功率場效應(yīng)晶體管 工業(yè)級 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 59K |
| 代理商： | 2SK2981 |
Data Sheet D12355EJ1V0DS00
2
2SK2981
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10 V, I
D
= 10 A
20
27
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 10 A
30
40
m
R
DS(on)3
V
GS
= 4 V, I
D
= 10 A
35
50
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.0
1.5
2.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 10 A
6.0
13.0
S
Drain Leakage Current
I
DSS
V
DS
= 30 V, V
GS
= 0
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20 V, V
DS
= 0
±10
μ
A
Input Capacitance
C
iss
V
DS
= 10 V, V
GS
= 0, f = 1 MHz
860
pF
Output Capacitance
C
oss
350
pF
Reverse Transfer Capacitance
C
rss
160
pF
Turn-on Delay Time
t
d(on)
I
D
= 10 A, V
GS(on)
= 10 V, V
DD
= 15 V
25
ns
Rise Time
t
r
R
G
= 10
270
ns
Turn-off Delay Time
t
d(off)
65
ns
Fall Time
t
f
65
ns
Total Gate Charge
Q
G
I
D
= 20 A, V
DD
= 24 V, V
GS
= 10 V
20
nC
Gate to Source Charge
Q
GS
3.5
nC
Gate to Drain Charge
Q
GD
6.5
nC
Body Diode forward Voltage
V
F(S-D)
I
F
= 20 A, V
GS
= 0
0.8
V
Reverse Recovery Time
t
rr
I
F
= 20 A, V
GS
= 0
35
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
30
nC
TEST CIRCUIT 2 GATE CHARGE
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
R
L
V
DD
R
G
R
G
=
10
PG.
Duty Cycle
≤
1 %
V
GS (on)
90 %
010 %
90 %
I
D
010 %
I
D
V
GS
90 %
10 %
t
d (on)
t
on
t
off
t
r
t
d (off)
t
f
WGS
D
Wave Form
D.U.T.
50
PG.
V
DD
I
G
=
2
mA
R
L
0
V
GS
t
μ
s
t = 1
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| 2SK2981-Z | Switching N-channel power MOS FET industrial use |
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| 2SK2983-S | Switching N-channel power MOS FET industrial use |
| 2SK2984 | Switching N-channel power MOS FET industrial use |
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