參數(shù)資料
型號(hào): 2SK2981
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: Switching N-channel power MOS FET industrial use
中文描述: N溝道 開(kāi)關(guān)功率場(chǎng)效應(yīng)晶體管 工業(yè)級(jí)
文件頁(yè)數(shù): 4/8頁(yè)
文件大小: 59K
代理商: 2SK2981
Data Sheet D12355EJ1V0DS00
4
2SK2981
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
PW - Pulse Width - s
r
t
/
10
0.001
0.01
0.1
1
100
1 000
1 m
10 m
100 m
1
10
100
1000
10
100
Single Pulse
T
C
= 25
C
R
th(ch-a)
= 125
C/W
R
th(ch-c)
= 6.25
C/W
μ
μ
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
V
DS
= 10 V
Pulsed
0.1
1
1
10
100
10
100
0.1
T
ch
=
25
C
25
C
75
C
125
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
V
GS
- Gate to Source Voltage - V
R
D
0
5
20
10
15
Pulsed
60
40
I
D
= 10 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
40
1
60
10
100
Pulsed
0
0.2
10.0 V
20
V
GS
= 4.0 V
4.5 V
80
GATE TO SOURCE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
= 10 V
I
D
= 1 mA
50
0
50
100
150
0
1.0
2.0
1.5
0.5
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