- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄50004 > 2SK3685-01 (FUJI ELECTRIC CO LTD) 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 PDF資料下載
參數(shù)資料
| 型號： | 2SK3685-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 19 A, 500 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 106K |
| 代理商： | 2SK3685-01 |
2
Characteristics
2SK3685-01
FUJI POWER MOSFET
04
8
12
16
20
24
0
10
20
30
40
50
7V
20V
10V
8V
6.5V
VGS=6.0V
ID
[
A
]
VDS [V]
Typical Output Characteristics
ID=f(VDS):80
s pulse test,Tch=25 °C
012
34
567
89
10
0.1
1
10
100
ID
[A
]
VGS[V]
Typical Transfer Characteristic
ID=f(VGS):80
s pulse test,VDS=25V,Tch=25 °C
0.1
1
10
100
0.1
1
10
100
gf
s
[S
]
ID [A]
Typical Transconductance
gfs=f(ID):80
s pulse test,VDS=25V,Tch=25 °C
0
10
203040
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RD
S
(on
)[
]
ID [A]
Typical Drain-Source on-state Resistance
RDS(on)=f(ID):80
s pulse test,Tch=25 °C
10V
20V
8V
7V
6.5V
VGS=6V
-50
-25
0
25
50
75
100
125
150
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RD
S
(on)
[
]
Tch [
°C]
typ.
max.
Drain-Source On-state Resistance
RDS(on)=f(Tch):ID=9.5A,VGS=10V
0
255075
100
125
150
0
100
200
300
400
Allowable Power Dissipation
PD=f(Tc)
PD
[
W
]
Tc [
°C]
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3689-01 | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 2SK369-BL | 16 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK369-GR | 10 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92 |
| 2SK3692-01 | 17 A, 450 V, 0.38 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK3700 | 5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3685-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3686-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 0.42Ohm;ID +/-16A;TO-220AB;PD 270W;VGS +/-3 |
| 2SK3686-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK3687-01MRSC-P | 制造商:Fuji Electric 功能描述: |
| 2SK3688-01LSC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。