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參數(shù)資料
| 型號(hào)： | 2SK3689-01 |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 16 A, 600 V, 0.57 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 3/4頁(yè) |
| 文件大?。?/td> | 109K |
| 代理商： | 2SK3689-01 |
3
2SK3689-01
FUJI POWER MOSFET
-50
-25
0
25
50
75
100
125
150
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
max.
min.
Gate Threshold Voltage vs. Tch
VGS(th)=f(Tch):VDS=VGS,ID=250
A
VG
S(
th
)[
V
]
Tch [
°C]
0
102030405060
0
2
4
6
8
10
12
14
Qg [nC]
Typical Gate Charge Characteristics
VGS=f(Qg):ID=16A,Tch=25
°C
VG
S
[V
]
480V
300V
Vcc= 120V
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
10
4
C
[pF
]
VDS [V]
Typical Capacitance
C=f(VDS):VGS=0V,f=1MHz
Crss
Coss
Ciss
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50
0.1
1
10
100
IF
[A
]
VSD [V]
Typical Forward Characteristics of Reverse Diode
IF=f(VSD):80
s pulse test,Tch=25 °C
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
10
3
Typical Switching Characteristics vs. ID
t=f(ID):Vcc=300V,VGS=10V,RG=10
td(on)
tr
tf
td(off)
t[n
s
]
ID [A]
0
25
50
75
100
125
150
0
100
200
300
400
500
600
700
I
AS
=7A
I
AS
=10A
I
AS
=16A
EA
V
[
m
J
]
starting Tch [
°C]
Maximum Avalanche Energy vs. starting Tch
E(AV)=f(starting Tch):Vcc=60V,I(AV)<=16A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3689-01SC | 制造商:Fuji Electric 功能描述: |
| 2SK368-GR(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
| 2SK368-Y(TE85L,F) | 制造商:Toshiba 功能描述:Trans JFET N-CH 6.5mA 3-Pin TO-236 T/R |
| 2SK3690-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 600V;RDS(ON) 1.8 Ohms;ID 4.5A;TO-220AB;PD 80W;VGS +/-30V |
| 2SK3691-01MRSC-P | 制造商:Fuji Electric 功能描述: |
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