參數(shù)資料
型號(hào): 2SK3812-ZP
元件分類: JFETs
英文描述: 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
封裝: TO-263, MP-25ZP, 3 PIN
文件頁數(shù): 7/10頁
文件大小: 270K
代理商: 2SK3812-ZP
Data Sheet D16738EJ1V0DS
4
2SK3812
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
-
Dr
ain
Cur
rent
-
A
0
100
200
300
400
500
0
0.4
0.8
1.2
1.6
VGS = 10 V
Pulsed
4.5 V
VDS - Drain to Source Voltage - V
I
D
-
Dr
ain
Cur
rent
-
A
0.001
0.01
0.1
1
10
100
1000
1
234
5
TA = 150°C
75°C
25°C
55°C
VDS = 10 V
Pulsed
VGS - Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
S
(off)
-
Gate
C
ut
-off
Voltage
-
V
0
0.5
1.0
1.5
2.0
2.5
3.0
-75
-25
25
75
125
175
VDS = 10 V
ID = 1 mA
Tch - Channel Temperature -
°C
|
y
fs
|-
Forward
T
ransfer
Admittan
ce
-
S
1
10
100
1000
0.1
1
10
100
1000
VDS = 10 V
Pulsed
TA = 150°C
75°C
25°C
55°C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
1
2
3
4
5
6
1
10
100
1000
Pulsed
10 V
VGS = 4.5 V
ID - Drain Current - A
R
DS(
on)
-Drain
to
S
ource
On
-state
Re
sistance
-m
0
1
2
3
4
5
6
0
2
4
6
8
10 12 14 16 18 20
Pulsed
ID = 110 A
55 A
22 A
VGS - Gate to Source Voltage - V
相關(guān)PDF資料
PDF描述
2SK3812-ZP 110 A, 60 V, 0.0037 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
2SK3814 60 A, 60 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
2SK3817 60 A, 60 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3818 74 A, 60 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK3823 40 A, 60 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK3812-ZP-A E2 制造商:Renesas Electronics Corporation 功能描述:
2SK3812-ZP-E1-A 制造商:Renesas Electronics Corporation 功能描述:
2SK3812-ZP-E1-AY 功能描述:MOSFET N-CH 60V MP-25ZP/TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
2SK3812-ZP-E1-AZ 制造商:Renesas Electronics Corporation 功能描述:
2SK3813-AZ 功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件