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參數(shù)資料
| 型號(hào)： | 3SK309 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
| 中文描述： | 砷化鎵?頻道雙柵場(chǎng)效應(yīng)晶體管超高頻射頻放大器 |
| 文件頁(yè)數(shù)： | 10/11頁(yè) |
| 文件大?。?/td> | 59K |
| 代理商： | 3SK309 |
Datasheet Title
4
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
1. This product must not be placed in the mouth, as it contains toxic substances that may cause poisoning.
If by chance the product is placed in the mouth, take emergency action such as inducing vomiting, then
consult a physician without delay.
2. Disposal of this product must be handled, separately from other general refuse, by a specialist
processing contractor in the same way as dangerous items.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3SK317 | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
| 3SK321 | Silicon N-Channel Dual Gate MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK317 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK317ZR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 3SK317ZR-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | 制造商:HITACHI 制造商全稱(chēng):Hitachi Semiconductor 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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