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參數(shù)資料
| 型號： | 3SK309 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | GaAs N Channel Dual Gate MES FET UHF RF Amplifier |
| 中文描述： | 砷化鎵?頻道雙柵場效應(yīng)晶體管超高頻射頻放大器 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 59K |
| 代理商： | 3SK309 |
3SK309
5
25
20
15
10
5
1
3
4
5
6
P
Drain to Source Voltage V
DS
(V)
0
2
Power Gain vs.
Drain to Source Voltage
V
G2S
= 0
f = 900 MHz
I
D
= 3 mA
5 mA
2.0
1.6
1.2
0.8
0.4
1
3
4
5
6
N
Drain to Source Voltage V
DS
(V)
0
2
Noise Figure vs.
Drain to Source Voltage
V
G2S
= 0
f = 900 MHz
I
D
= 5 mA
3 mA
25
20
15
10
5
–1
0
P
Gate2 to Source Voltage V
G2S
(V)
0
–0.8
–0.6
–0.4
–0.2
Power Gain vs.
Gate2 to Source Voltage
V
G1S
is fixed
for I
D
= 5 mA
at V
G2S
= 0
V
DS
= 3 V
f = 900 MHz
50
40
30
20
10
–1.5
–0.5
0
0.5
1.0
G
Gate2 to Source Voltage V
G2S
(V)
0
–1.0
Gain Reduction vs.
Gate2 to Source Voltage
V
G1S
is fixed
for I
D
= 5 mA
at V
G2S
= 0
V
DS
= 3 V
f = 900 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3SK317 | Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
| 3SK321 | Silicon N-Channel Dual Gate MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK317 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK317ZR(TL-E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 3SK317ZR-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier |
| 3SK318 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
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