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參數(shù)資料
| 型號： | 3SK318 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 中文描述： | 硅N溝道雙柵場效應(yīng)晶體管超高頻射頻放大器 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 54K |
| 代理商： | 3SK318 |
3SK318
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
V
G2S
I
D
Pch
6
V
Gate1 to source voltage
±
6
±
6
V
Gate2 to source voltage
V
Drain current
20
mA
Channel power dissipation
100
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
—
—
V
I
D
= 200
μ
A, V
G1S
= V
G2S
= 0
Gate1 to source breakdown
voltage
V
(BR)G1SS
±
6
—
—
V
I
G1
=
±
10
μ
A, V
G2S
= V
DS
= 0
Gate2 to source breakdown
voltage
V
(BR)G2SS
±
6
—
—
V
I
G2
=
±
10
μ
A, V
G1S
= V
DS
= 0
Gate1 to source cutoff current
I
G1SS
I
G2SS
—
—
±
100
±
100
nA
V
G1S
=
±
5V, V
G2S
= V
DS
= 0
V
G2S
=
±
5V, V
G1S
= V
DS
= 0
V
DS
= 5V, V
G2S
= 3V
I
D
= 100
μ
A
V
DS
= 5V, V
G1S
= 3V
I
D
= 100
μ
A
V
DS
= 3.5V, V
G1S
= 1.1V
V
G2S
= 3V
V
DS
= 3.5V, V
= 3V
I
D
= 10mA , f = 1kHz
V
DS
= 3.5V, V
G2S
= 3V
I
D
= 10mA , f= 1MHz
Gate2 to source cutoff current
—
—
nA
Gate1 to source cutoff voltage V
G1S(off)
0.5
0.7
1.0
V
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
Drain current
I
DS(op)
0.5
4
10
mA
Forward transfer admittance
|y
fs
|
18
24
32
mS
Input capacitance
C
iss
C
oss
C
rss
PG
1.3
1.6
1.9
pF
Output capacitance
0.9
1.2
1.5
pF
Reverse transfer capacitance
—
0.019
0.03
pF
Power gain
18
21
—
dB
V
DS
= 3.5V, V
G2S
= 3V
I
D
= 10mA , f = 900MHz
Noise figure
NF
—
1.4
2.2
dB
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 3SK318YB-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319YB-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans RF MOSFET N-CH 6V 0.02A 4-Pin(3+Tab) MPAK T/R |
| 3SK320 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
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