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參數(shù)資料
| 型號(hào)： | 3SK318 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 中文描述： | 硅N溝道雙柵場(chǎng)效應(yīng)晶體管超高頻射頻放大器 |
| 文件頁(yè)數(shù)： | 6/9頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 3SK318 |
3SK318
6
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Scale: 1 / div.
60
°
0
°
30
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
Scale: 0.002 / div.
60
°
0
°
30
°
90
°
120
°
150
°
180
°
–150
°
–90
°
–60
°
–30
°
–120
°
10
5
4
3
2
1.5
1
.8
–2
–3
–4
–5
–10
.6
.4
.2
0
–.2
–.4
–.6
–.8
–1
–1.5
.2
.4
.6 .8 1
2
3 4 5
1.5
10
Test Condition :
50 to 1000 MHz (50 MHz step)
D
V = 3.5 V , V = 3 V
I = 10mA
S11 Parameter vs. Frequency
S21 Parameter vs. Frequency
S12 Parameter vs. Frequency
S22 Parameter vs. Frequency
Test Condition :
50 to 1000 MHz (50 MHz step)
D
V = 3.5 V , V = 3 V
I = 10mA
Test Condition :
50 to 1000 MHz (50 MHz step)
V = 3.5 V , V = 3 V
I = 10mA
Test Condition :
50 to 1000 MHz (50 MHz step)
V = 3.5 V , V = 3 V
I = 10mA
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PDF描述 |
|---|---|
| 3SK319 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
| 3SK321 | Silicon N-Channel Dual Gate MOS FET |
| 3SK322 | Silicon N-Channel Dual Gate MOS FET |
| 3SMAJ5913B | 3.0 Watt Surface Mount Silicon Zener Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 3SK318YB-TL-E | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319YB-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans RF MOSFET N-CH 6V 0.02A 4-Pin(3+Tab) MPAK T/R |
| 3SK320 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
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