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參數(shù)資料
| 型號(hào)： | 3SK318 |
| 廠(chǎng)商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 中文描述： | 硅N溝道雙柵場(chǎng)效應(yīng)晶體管超高頻射頻放大器 |
| 文件頁(yè)數(shù)： | 4/9頁(yè) |
| 文件大?。?/td> | 54K |
| 代理商： | 3SK318 |
3SK318
4
25
20
15
10
5
0
5
Drain Current I (mA)
10
15
20
25
30
24
18
12
6
0
0.4
0.8
1.2
1.6
2.0
V = 3 V
1 V
2 V
5
4
3
2
1
0
5
Drain Current I (mA)
10
15
20
25
25
20
15
10
5
0
2
4
6
8
10
F
f
Gate1 to Source Voltage V (V)
P
Power Gain vs. Drain Current
Forward Transfer Admittance
vs. Gate1 Voltage
V = 3.5 V
1.5 V
2.5 V
N
Noise Figure vs. Drain Current
Power Gain vs. Drain to Source Voltage
P
Drain to Source Voltage V (V)
V = 3.5 V
V = 3 V
f = 900 MHz
V = 3.5 V
V = 3 V
f = 900 MHz
V = 3 V
I = 10 mA
f = 900 MHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 3SK319 | Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK320 | N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
| 3SK321 | Silicon N-Channel Dual Gate MOS FET |
| 3SK322 | Silicon N-Channel Dual Gate MOS FET |
| 3SMAJ5913B | 3.0 Watt Surface Mount Silicon Zener Diodes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 3SK318YB(TL) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 3SK318YB-TL-E | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319 | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier |
| 3SK319YB-TL-E | 制造商:Renesas Electronics Corporation 功能描述:Trans RF MOSFET N-CH 6V 0.02A 4-Pin(3+Tab) MPAK T/R |
| 3SK320 | 制造商:TOSHIBA 制造商全稱(chēng):Toshiba Semiconductor 功能描述:N CHANNEL DUAL GATE MES TYPE (UHF BAND LOW NOISE AMP, MIX) |
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