參數(shù)資料
型號(hào)： 42S16400A
廠商： Integrated Silicon Solution, Inc.
英文描述： 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 1梅格位× 16位× 4銀行（64兆位）同步動(dòng)態(tài)RAM
文件頁數(shù)： 12/55頁
文件大?。?/td> 472K
代理商： 42S16400A
IS42S16400A
ISSI
2
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.C
04/16/03
GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic
random-access memory designed to operate in 3.3V
memory systems containing 67,108,864 bits. Internally
configured as a quad-bank DRAM with a synchronous
interface. Each 16,777,216-bit bank is organized as 4,096
rows by 256 columns by 16 bits.
The 64Mb SDRAM includes an AUTO REFRESH MODE,
and a power-saving, power-down mode. All signals are
registered on the positive edge of the clock signal, CLK.
All inputs and outputs are LVTTL compatible.
The 64Mb SDRAM has the ability to synchronously burst
data at a high data rate with automatic column-address
generation, the ability to interleave between internal banks
to hide precharge time and the capability to randomly
change column addresses on each clock cycle during
burst access.
A self-timed row precharge initiated at the end of the burst
sequence is available with the AUTO PRECHARGE
function enabled. Precharge one bank while accessing one
of the other three banks will hide the precharge cycles and
provide seamless, high-speed, random-access operation.
SDRAM read and write accesses are burst oriented starting
at a selected location and continuing for a programmed
number of locations in a programmed sequence. The
registration of an ACTIVE command begins accesses,
followed by a READ or WRITE command. The ACTIVE
command in conjunction with address bits registered are
used to select the bank and row to be accessed (BA0, BA1
select the bank; A0-A11 select the row). The READ or
WRITE commands in conjunction with address bits reg-
istered are used to select the starting column location for
the burst access.
Programmable READ or WRITE burst lengths consist of
1, 2, 4 and 8 locations or full page, with a burst terminate
option.
CLK
CKE
CS
RAS
CAS
WE
A11
A9
A8
A7
A6
A5
A4
A3
A2
A1
A0
BA0
BA1
A10
COMMAND
DECODER
&
CLOCK
GENERATOR
MODE
REGISTER
REFRESH
CONTROLLER
REFRESH
COUNTER
SELF
REFRESH
CONTROLLER
ROW
ADDRESS
LATCH
MUL
TIPLEXER
COLUMN
ADDRESS LATCH
BURST COUNTER
COLUMN
ADDRESS BUFFER
COLUMN DECODER
DATA IN
BUFFER
DATA OUT
BUFFER
DQM
I/O 0-15
Vcc/VccQ
GND/GNDQ
11
8
11
8
16
256K
(x 16)
4096
R
O
W
DECODER
4096
MEMORY CELL
ARRAY
BANK 0
SENSE AMP I/O GATE
BANK CONTROL LOGIC
ROW
ADDRESS
BUFFER
FUNCTIONAL BLOCK DIAGRAM
相關(guān)PDF資料
PDF描述
42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
4300-000 EMI/RFI FILTER Hermetically Sealed
4300-000LF
4300-001 EMI/RFI FILTER Hermetically Sealed
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
42S16400B-6TLTR 制造商:Integrated Silicon Solution Inc 功能描述:
42S16800A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S16800L 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A60 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A70 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
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