參數(shù)資料
型號: 42S16400A
廠商: Integrated Silicon Solution, Inc.
英文描述: 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述: 1梅格位× 16位× 4銀行(64兆位)同步動態(tài)RAM
文件頁數(shù): 52/55頁
文件大?。?/td> 472K
代理商: 42S16400A
IS42S16400A
ISSI
6
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev.C
04/16/03
TRUTH TABLE – COMMANDS AND DQM OPERATION(1)
FUNCTION
CS
RAS
CAS
WE
DQM
ADDR
DQs
COMMAND INHIBIT (NOP)
H
X
NO OPERATION (NOP)
L
H
X
ACTIVE (Select bank and activate row)(3)
L
H
X
Bank/Row
X
READ (Select bank/column, start READ burst)
(4)
LH
L/H(8)
Bank/Col
X
WRITE (Select bank/column, start WRITE burst)
(4)
L
H
L
L/H(8)
Bank/Col
Valid
BURST TERMINATE
L
H
L
X
Active
PRECHARGE (Deactivate row in bank or banks)
(5)
L
H
L
X
Code
X
AUTO REFRESH or SELF REFRESH
(6,7)
L
H
XXX
(Enter self refresh mode)
LOAD MODE REGISTER
(2)
L
X
Op-Code
X
Write Enable/Output Enable
(8)
L
Active
Write Inhibit/Output High-Z
(8)
H
High-Z
NOTES:
1. CKE is HIGH for all commands except SELF REFRESH.
2. A0-A11 define the op-code written to the mode register.
3. A0-A11 provide row address, and BA0, BA1 determine which bank is made active.
4. A0-A7 (x16) provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables
auto precharge; BA0, BA1 determine which bank is being read from or written to.
5. A10 LOW: BA0, BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA0, BA1 are “Don’t Care.”
6. AUTO REFRESH if CKE is HIGH, SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “Don’t Care” except for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay).
相關(guān)PDF資料
PDF描述
42S16800A 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
4300-000 EMI/RFI FILTER Hermetically Sealed
4300-000LF
4300-001 EMI/RFI FILTER Hermetically Sealed
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
42S16400B-6TLTR 制造商:Integrated Silicon Solution Inc 功能描述:
42S16800A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
42S16800L 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A60 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE
42S16800L-A70 制造商:NEC 制造商全稱:NEC 功能描述:3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE