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參數(shù)資料
| 型號： | 4AK27 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應(yīng)晶體管高速電源開關(guān) |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 53K |
| 代理商： | 4AK27 |
4AK27
3
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage
V
(BR)DSS
60
—
V
I
D = 10mA, VGS = 0
Gate to source breakdown voltage
V
(BR)GSS
±20
—
V
I
G = ±100A, VDS = 0
Zero gate voltege drain current
I
DSS
—
100
AV
DS = 50 V, VGS = 0
Gate to source leak current
I
GSS
——
±10
AV
GS = ±16V, VDS = 0
Gate to source cutoff voltage
V
GS(off)
1.0
—
2.25
V
I
D = 1mA, VDS = 10V
Static drain to source on state resistance
R
DS(on)
—
0.12
0.15
I
D = 3A, VGS = 10V
Note4
Static drain to source on state resistance
R
DS(on)
—
0.15
0.2
I
D = 3A, VGS = 4V
Note4
Forward transfer admittance
|y
fs|
3.0
5.5
—
S
I
D = 3A, VDS = 10V
Note4
Input capacitance
Ciss
—
390
—
pF
V
DS = 10V
Output capacitance
Coss
—
190
—
pF
V
GS = 0
Reverse transfer capacitance
Crss
—
45
—
pF
f = 1MHz
Turn-on delay time
t
d(on)
—
10
—
ns
V
GS = 10V, ID = 3A
Rise time
t
r
—
42
—
ns
R
L = 10
Turn-off delay time
t
d(off)
—90
—
ns
Fall time
t
f
—55
—
ns
Body–drain diode forward voltage
V
DF
—
1.0
—
V
I
F = 5A, VGS = 0
Body–drain diode reverse recovery time
t
rr
—
60
—
ns
I
F = 5A, VGS = 0
diF/ dt =50A/
s
Note:
4.
Pulse test
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