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參數資料
| 型號： | 4AK27 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET High Speed Power Switching |
| 中文描述： | 硅?通道場效應晶體管高速電源開關 |
| 文件頁數： | 5/9頁 |
| 文件大小： | 53K |
| 代理商： | 4AK27 |
4AK27
5
1.0
0.8
0.6
0.4
0.2
02
4
6
8
10
Gate to Source Voltage
V
(V)
GS
Pulse Test
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
I
= 1 A
D
5 A
2 A
V
(V)
DS(on)
Drain
to
Source
Sasuration
Voltage
Drain Current
I
(A)
D
Drain
to
Source
On
State
Resistance
R
(
)
DS(on)
0.1
Static Drain to Source State Resistance
vs. Drain Current
1
0.2
0.5
0.1
0.05
0.2
0.5
1
2
5
10 20
50
4 V
V
= 10 V
GS
Pulse Test
0.5
0.4
0.3
0.2
0.1
–40
0
40
80
120
160
Case Temperature
Tc
(°C)
0
R
(
)
DS(on)
Static
Drain
to
Source
on
State
Resistance
Pulse Test
10 V
V
= 4 V
GS
Static Drain to Source on State Resistance
vs. Temperature
1 A
2 A
1 A
2 A
I
= 5 A
D
5 A
0.1
Forward
Transfer
Admittance
|yfs|
(S)
Drain Current I
(A)
D
Forward Transfer Admittance vs.
Drain Current
20
10
5
2
1
0.5
0.2
0.5
1
2
5
10
Tc = –25 °C
25 °C
75 °C
DS
V
= 10 V
Pulse Test
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