參數(shù)資料
型號： 71V35761YSA183BGI8
廠商： INTEGRATED DEVICE TECHNOLOGY INC
元件分類： SRAM
英文描述： 128K X 36 CACHE SRAM, 3.3 ns, PBGA119
封裝： BGA-119
文件頁數(shù)： 17/22頁
文件大?。?/td> 621K
代理商： 71V35761YSA183BGI8
6.42
4
IDT71V35761Y (128K x 36), IDT71V35781Y (256K x 18), 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
100 Pin TQFP Capacitance
(TA = +25°C, f = 1.0MHz)
RecommendedOperating
Temperature and Supply Voltage
Absolute Maximum Ratings(1)
NOTES:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may
cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
2. VDD terminals only.
3. VDDQ terminals only.
4. Input terminals only.
5. I/O terminals only.
6. This is a steady-state DC parameter that applies after the power supplies have
ramped up. Power supply sequencing is not necessary; however, the voltage
on any input or I/O pin cannot exceed VDDQ during power supply ramp up.
7. During production testing, the case temperature equals TA.
Recommended DC Operating
Conditions
NOTES:
1. VIH (max) = VDDQ + 1.0V for pulse width less than tCYC/2, once per cycle.
2. VIL (min) = -1.0V for pulse width less than tCYC/2, once per cycle.
NOTE:
1. This parameter is guaranteed by device characterization, but not production tested.
Symbol
Rating
Commercial &
Industrial
Unit
VTERM(2)
Terminal Voltage with
Respect to GND
-0.5 to +4.6
V
VTERM(3,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD
V
VTERM(4,6)
Terminal Voltage with
Respect to GND
-0.5 to VDD +0.5
V
VTERM(5,6)
Terminal Voltage with
Respect to GND
-0.5 to VDDQ +0.5
V
TA(7)
Commercial
Operating Temperature
0 to +70
oC
Industrial
Operating Temperature
-40 to +85
oC
TBIAS
Temperature
Under Bias
-55 to +125
oC
TSTG
Storage
Temperature
-55 to +125
oC
PT
Power Dissipation
2.0
W
IOUT
DC Output Current
50
mA
6445 tbl 03
Grade
Ambient
Temperature(1)
VSS
VDD
VDDQ
Commercial
0°C to +70°C
0V
3.3V±5%
Industrial
-40°C to +85°C
0V
3.3V±5%
6445 tbl 04
Symbol
Parameter
Min.
Typ.
Max.
Unit
VDD
Core Supply Voltage
3.135
3.3
3.465
V
VDDQ
I/O Supply Voltage
3.135
3.3
3.465
V
VSS
Supply Voltage
0
V
VIH
Input High Voltage - Inputs
2.0
____
VDD +0.3
V
VIH
Input High Voltage - I/O
2.0
____
VDDQ +0.3(1)
V
VIL
Input Low Voltage
-0.3(2)
____
0.8
V
6445 tbl 06
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
5
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
6445 tbl 07
119 BGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
6445 tbl 07a
NOTES:
1. During production testing, the case temperature equals the ambient
temperature.
165 fBGA Capacitance
(TA = +25°C, f = 1.0MHz)
Symbol
Parameter(1)
Conditions
Max.
Unit
CIN
Input Capacitance
VIN = 3dV
7
pF
CI/O
I/O Capacitance
VOUT = 3dV
7
pF
6445 tbl 07b
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