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參數(shù)資料
| 型號： | 71V35761YSA183BGI8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 3.3 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | 71V35761YSA183BGI8 |
6.42
11
IDT71V35761Y (128K x 36), IDT71V35781Y (256K x 18), 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Linear Burst Sequence Table (LBO=VSS)
Synchronous Write Function Truth Table(1, 2)
Asynchronous Truth Table(1)
Interleaved Burst Sequence Table (LBO=VDD)
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2.
BW3 and BW4 are not applicable for the IDT71V35781.
3. Multiple bytes may be selected during the same cycle.
NOTES:
1. L = VIL, H = VIH, X = Don’t Care.
2. Synchronous function pins must be biased appropriately to satisfy operation requirements.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
NOTE:
1. Upon completion of the Burst sequence the counter wraps around to its initial state.
Operation
GW
BWE
BW1
BW2
BW3
BW4
Read
HHX
X
Read
HL
HH
Write all Bytes
L
X
Write all Bytes
H
L
Write Byte 1(3)
HL
L
H
HH
Write Byte 2(3)
HL
H
L
HH
Write Byte 3(3)
HL
HHL
H
Write Byte 4(3)
HL
HH
H
L
6445 tbl 12
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
1
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address
(1)
11
00
0
1
0
6445 tbl 15
Sequence 1
Sequence 2
Sequence 3
Sequence 4
A1
A0
A1
A0
A1
A0
A1
A0
First Address
0
1
0
1
Second Address
0
1
0
1
0
Third Address
1
0
1
0
1
Fourth Address(1)
111
0
1
0
6445 tbl 14
Operation(2)
OE
ZZ
I/O Status
Power
Read
L
Data Out
Active
Read
H
L
High-Z
Active
Write
X
L
High-Z – Data In
Active
Deselected
X
L
High-Z
Standby
Sleep Mode
X
H
High-Z
Sleep
6445 tbl 13
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 71V3576S133BGI | 制造商:Integrated Device Technology Inc 功能描述: |
| 71V3576S133PFG | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3576S133PFG8 | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3576S133PFGI | 功能描述:靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3576S133PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 4.2NS 100TQFP - Tape and Reel |
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