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參數(shù)資料
| 型號： | 71V35761YSA183BGI8 |
| 廠商： | INTEGRATED DEVICE TECHNOLOGY INC |
| 元件分類： | SRAM |
| 英文描述： | 128K X 36 CACHE SRAM, 3.3 ns, PBGA119 |
| 封裝： | BGA-119 |
| 文件頁數(shù)： | 20/22頁 |
| 文件大?。?/td> | 621K |
| 代理商： | 71V35761YSA183BGI8 |
6.42
7
IDT71V35761Y (128K x 36), IDT71V35781Y (256K x 18), 3.3V Synchronous SRAMs with
3.3V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect
Commercial and Industrial Temperature Ranges
Pin Configuration – 256K x 18, 119 BGA
Pin Configuration – 128K x 36, 119 BGA
Top View
NOTES:
1. R5 can either be directly connected to VDD, or connected to an input voltage
≥ VIH, or left unconnected.
2. These pins are NC for the "S" version or the JTAG signal listed for the "SA" version. Note: If NC, these pins can either be tied to VSS, VDD or left floating.
3. T7 can be left unconnected and the device will always remain in active mode.
4.
TRST is offered as an optional JTAG Reset if required in the application. If not needed, can be left floating and will internally be pulled to VDD.
1
234
56
7
A
VDDQ
A6
A4
ADSP
A8
A16
VDDQ
B
NC
CS0
A3
ADSC
A9
CS1
NC
C
A7
A2
VDD
A12
A15
NC
D
I/O16
I/OP3
VSS
NC
VSS
I/OP2
I/O15
E
I/O17
I/O18
VSS
CE
VSS
I/O13
I/O14
F
VDDQ
I/O19
VSS
OE
VSS
I/O12
VDDQ
G
I/O20
I/O21
BW3
ADV
BW2
I/O11
I/O10
H
I/O22
I/O23
VSS
GW
VSS
I/O9
I/O8
J
VDDQ
VDD
NC
VDD
NC
VDD
VDDQ
K
I/O24
I/O26
VSS
CLK
VSS
I/O6
I/O7
L
I/O25
I/O27
BW4
NC
BW1
I/O4
I/O5
M
VDDQ
I/O28
VSS
BWE
VSS
I/O3
VDDQ
N
I/O29
I/O30
VSS
A1
VSS
I/O2
I/O1
P
I/O31
I/OP4
VSS
A0
VSS
I/O
0
I/O
P1
R
NC
A5
LBO
VDD
A13
T
NC
A10
A11
A14
NC
ZZ(3)
U
VDDQ
NC/TMS(2) NC/TDI(2) NC/TCK(2)
NC/TDO(2)
NC/TRST(2,4) VDDQ
6445 drw 04
VDD /NC(1)
NC
,
123
456
7
A
VDDQ
A6
A4
ADSP
A8
A16
VDDQ
B
NC
CS0
A3
ADSC
A9
CS1
NC
C
A7
A2
VDD
A13
A17
NC
D
I/O8
NC
VSS
NC
VSS
I/OP1
NC
E
NC
I/O9
VSS
CE
VSS
NC
I/O7
F
VDDQ
NC
VSS
OE
VSS
I/O6
VDDQ
G
NC
I/O10
BW2
ADV
NC
I/O5
H
I/O11
NC
VSS
GW
VSS
I/O4
NC
J
VDDQ
VDD
NC
VDD
NC
VDD
VDDQ
K
NC
I/O12
VSS
CLK
VSS
NC
I/O3
L
I/O13
NC
BW1
I/O2
NC
M
VDDQ
I/O14
VSS
BWE
VSS
NC
VDDQ
N
I/O15
NC
VSS
A1
VSS
I/O1
NC
P
NC
I/OP2
VSS
A0
VSS
NC
I/O0
R
NC
A5
LBO
VDD
A12
T
NC
A10
A15
NC
A14
A11
ZZ(3)
U
VDDQ
6445 drw 05
NC
VDD /NC(1)
NC
VSS
,
NC/TMS(2) NC/TDI(2) NC/TCK(2)
NC/TDO(2) NC/TRST(2,4)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 71V3576S133BGI | 制造商:Integrated Device Technology Inc 功能描述: |
| 71V3576S133PFG | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3576S133PFG8 | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3576S133PFGI | 功能描述:靜態(tài)隨機(jī)存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| 71V3576S133PFGI8 | 制造商:Integrated Device Technology Inc 功能描述:SRAM Chip Sync Single 3.3V 4.5M-Bit 128K x 36 4.2ns 100-Pin TQFP T/R 制造商:Integrated Device Technology Inc 功能描述:SRAM SYNC SGL 3.3V 4.5MBIT 128KX36 4.2NS 100TQFP - Tape and Reel |
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