參數(shù)資料
型號(hào): 934028870135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁數(shù): 10/12頁
文件大小: 163K
代理商: 934028870135
1997 Sep 05
7
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF909WR
VDS = 5 V; Tj =25 °C.
RG1 = 120 k (connected to VGG).
Fig.11 Drain current as a function of gate 2 voltage;
typical values; see Fig.17.
handbook, halfpage
024
6
20
0
16
MLB944
12
8
4
I D
(mA)
4.5 V
4 V
3.5 V
3 V
V
= 5 V
GG
V
(V)
G2 S
Fig.12 Gate 1 current as a function of gate 2
voltage; typical values; see Fig.17.
VDS = 5 V; Tj =25 °C.
RG1 = 120 k (connected to VGG).
handbook, halfpage
02
46
40
30
10
0
20
MLB945
I G1
(
A)
V
(V)
G2 S
4.5 V
4 V
3.5 V
3 V
V
= 5 V
GG
Fig.13 Input admittance as a function of frequency;
typical values.
VDS = 5 V; VG2 =4V.
ID = 15 mA; Tamb =25 °C.
handbook, halfpage
10 3
MLB946
102
10
10 1
10 2
10
1
y is
(mS)
f (MHz)
b is
g is
Fig.14 Reverse transfer admittance and phase as
a function of frequency; typical values.
VDS = 5 V; VG2 =4V.
ID = 15 mA; Tamb =25 °C.
10 3
MLB947
102
10
10 3
10 2
10
1
y rs
10 3
10
1
2
rs
(
S)
f (MHz)
rs
yrs
(deg)
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