參數(shù)資料
型號: 934028870135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁數(shù): 5/12頁
文件大?。?/td> 163K
代理商: 934028870135
1997 Sep 05
2
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF909WR
FEATURES
Specially designed for use at 5 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications with 3 to 7 V supply voltage
such as television tuners and professional
communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: ME.
handbook, halfpage
MAM192
s,b
d
g
1
g
2
Top view
21
34
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
7V
ID
drain current
40
mA
Ptot
total power dissipation
280
mW
Tj
operating junction temperature
150
°C
y
fs
forward transfer admittance
36
43
50
mS
Cig1-s
input capacitance at gate 1
3.6
4.3
pF
Crs
reverse transfer capacitance
f = 1 MHz
30
50
fF
F
noise gure
f = 800 MHz
2
2.8
dB
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934028870115 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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