參數(shù)資料
型號(hào): 934028870135
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁數(shù): 8/12頁
文件大?。?/td> 163K
代理商: 934028870135
1997 Sep 05
5
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF909WR
Fig.3
Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; see Fig.17.
VDS = 5 V; VGG = 5 V; fw = 50 MHz.
funw = 60 MHz; Tamb =25 °C; RG1 = 120 k.
handbook, halfpage
0
110
100
90
80
10
50
MLB936
20
30
40
Vunw
(dB
V)
gain reduction (dB)
Fig.4 Transfer characteristics; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
30
20
10
0
0.4
2.0
MLB937
0.8
1.2
1.6
I D
(mA)
V
(V)
G1 S
V
= 4 V 3 V
2.5 V
2 V
1.5 V
1 V
G2 S
Fig.5 Output characteristics; typical values.
VDS =5V.
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
0
30
20
10
0
210
MLB938
46
8
I D
(mA)
V
(V)
DS
1.3 V
1.2 V
1.1 V
1.0 V
0.9 V
V
= 1.4 V
G1 S
Fig.6
Gate 1 current as a function of gate 1
voltage; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
01
23
200
150
50
0
100
MLB939
I G1
(
A)
V
(V)
G1 S
3 V
2.5 V
2 V
3.5 V
V
= 4 V
G2 S
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