參數(shù)資料
型號： 934028870135
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝： MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁數(shù)： 9/12頁
文件大小： 163K
代理商： 934028870135
1997 Sep 05
6
Philips Semiconductors
Product specication
N-channel dual-gate MOS-FET
BF909WR
Fig.7
Forward transfer admittance as a
function of drain current; typical values.
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
60
40
20
0
10
20
30
MLB940
y fs
(mS)
I
(mA)
D
3.5 V
3 V
2.5 V
2 V
V
= 4 V
G2 S
Fig.8
Drain current as a function of gate 1 current;
typical values.
VDS =5V.
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
020
40
60
25
0
20
MLB941
15
10
5
I
(
A)
G1
I D
(mA)
Fig.9
Drain current as a function of gate 1
supply voltage (= VGG); typical values;
see Fig.17.
VDS = 5 V; VG2-S =4V.
RG1 = 120 k (connected to VGG); Tj =25 °C.
handbook, halfpage
02
46
16
12
4
0
8
MLB942
V
(V)
GG
I D
(mA)
Fig.10 Drain current as a function of gate 1
(= VGG) and drain supply voltage;
typical values; see Fig.17.
VG2-S =4V.
RG1 connected to VGG; Tj =25 °C.
handbook, halfpage
0
30
20
10
0
24
8
MLB943
6
V
= V
(V)
GG
DS
I D
(mA)
R
= 47 k
G1
68 k
82 k
100 k
120 k
150 k
180 k
220 k
相關(guān)PDF資料
PDF描述
934028870115 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
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