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| 型號(hào)： | 934036570115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 13/14頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 934036570115 |
1995 Apr 25
8
Philips Semiconductors
Product specication
Dual-gate MOS-FET
BF1100WR
Fig.14 Gate 1 current as a function of gate 2 voltage;
typical values.
VDS =9V.
RG1 = 180 k (connected to VGG); Tj =25 °C.
handbook, halfpage
02
46
50
40
30
10
0
20
MLD167
I G1
(
A)
V
(V)
G2 S
8 V
7 V
6 V
5 V
4 V
V
= 9 V
GG
Fig.15 Gate 1 current as a function of gate 2 voltage;
typical values.
VDS =12V.
RG1 = 250 k (connected to VGG); Tj =25 °C.
handbook, halfpage
02
46
50
40
30
10
0
20
MLD168
I G1
(
A)
V
(V)
G2 S
11 V
10 V
9 V
8 V
7 V
V
= 12 V
GG
Fig.16 Drain current as a function of the gate 2
voltage; typical values; see Fig.26.
VDS =9V.
RG1 = 180 k (connected to VGG); Tj =25 °C.
handbook, halfpage
024
6
0
16
MLD169
12
8
4
I D
(mA)
8 V
7 V
6 V
5 V
4 V
V
= 9 V
GG
V
(V)
G2 S
VDS =12V.
RG1 = 250 k (connected to VGG); Tj =25 °C.
Fig.17 Drain current as a function of the gate 2
voltage; typical values; see Fig.26.
handbook, halfpage
024
6
0
16
MLD170
12
8
4
I D
(mA)
11 V
10 V
9 V
8 V
7 V
V
= 12 V
GG
V
(V)
G2 S
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