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參數(shù)資料
| 型號： | 934036570115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 8/14頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 934036570115 |
1995 Apr 25
3
Philips Semiconductors
Product specication
Dual-gate MOS-FET
BF1100WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
14
V
ID
drain current
30
mA
IG1
gate 1 current
±10
mA
IG2
gate 2 current
±10
mA
Ptot
total power dissipation
see Fig.2; up to Tamb =50 °C; note 1
280
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
+150
°C
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
300
0
MLD180
150
200
100
Ptot
(mW)
T
( C)
amb
o
Fig.3
Forward transfer admittance as a function
of junction temperature; typical values.
50
0
50
150
40
0
MLD156
100
30
20
10
Yfs
(mS)
T ( C)
j
o
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