參數(shù)資料
型號: 934036570115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: MICRO MINIATURE, PLASTIC, SMD, CMPAK-4
文件頁數(shù): 4/14頁
文件大小: 146K
代理商: 934036570115
1995 Apr 25
12
Philips Semiconductors
Product specication
Dual-gate MOS-FET
BF1100WR
Table 1
Scattering parameters: VDS = 9 V; VG2-S = 4 V; ID =10mA
Table 2
Noise data: VDS = 9 V; VG2-S = 4 V; ID =10mA
Table 3
Scattering parameters: VDS = 12 V; VG2-S = 4 V; ID =10mA
Table 4
Noise data: VDS = 12 V; VG2-S = 4 V; ID =10mA
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.985
3.9
2.618
175.1
0.001
137.9
1.000
1.9
100
0.981
7.3
2.602
170.5
0.001
80.4
0.999
4.0
200
0.975
14.4
2.577
160.7
0.002
74.0
0.995
7.6
300
0.965
21.6
2.555
151.6
0.002
79.3
0.994
11.3
400
0.947
28.3
2.513
141.8
0.003
80.5
0.992
15.0
500
0.927
34.9
2.449
133.4
0.003
82.8
0.988
18.5
600
0.913
41.7
2.339
124.6
0.003
78.9
0.984
22.0
700
0.890
47.9
2.361
115.4
0.003
80.6
0.982
25.3
800
0.869
54.0
2.302
106.4
0.003
93.9
0.979
28.8
900
0.845
59.7
2.228
97.6
0.003
104.8
0.976
32.1
1000
0.823
65.4
2.167
89.6
0.003
129.3
0.974
35.5
f
(MHz)
Fmin
(dB)
Γopt
rn
(ratio)
(deg)
800
2.00
0.67
43.9
0.89
f
(MHz)
s11
s21
s12
s22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50
0.985
3.7
2.576
175.3
0.000
125.0
1.000
1.6
100
0.980
7.4
2.563
170.9
0.001
111.2
1.000
3.3
200
0.973
14.6
2.541
161.6
0.002
83.0
0.997
6.4
300
0.962
21.5
2.519
152.9
0.002
85.2
0.996
9.3
400
0.946
28.5
2.479
143.5
0.003
79.4
0.995
12.4
500
0.929
35.0
2.419
135.5
0.003
78.2
0.991
15.3
600
0.912
41.6
2.373
127.2
0.003
80.0
0.989
18.1
700
0.895
47.8
2.336
118.7
0.003
83.4
0.987
20.9
800
0.868
53.8
2.284
110.0
0.003
91.3
0.985
23.7
900
0.845
59.8
2.213
101.6
0.003
95.9
0.983
26.5
1000
0.823
65.7
2.160
94.1
0.003
112.2
0.981
29.3
f
(MHz)
Fmin
(dB)
Γ
opt
rn
(ratio)
(deg)
800
2.00
0.66
43.3
0.97
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