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參數(shù)資料
| 型號(hào)： | 934036570115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 146K |
| 代理商： | 934036570115 |
1995 Apr 25
2
Philips Semiconductors
Product specication
Dual-gate MOS-FET
BF1100WR
FEATURES
Specially designed for use at 9 to 12 V supply voltage
Short channel transistor with high forward transfer
admittance to input capacitance ratio
Low noise gain controlled amplifier up to 1 GHz
Superior cross-modulation performance during AGC.
APPLICATIONS
VHF and UHF applications such as television tuners and
professional communications equipment.
DESCRIPTION
Enhancement type field-effect transistor in a plastic
microminiature SOT343R package. The transistor
consists of an amplifier MOS-FET with source and
substrate interconnected and an internal bias circuit to
ensure good cross-modulation performance during AGC.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING
PIN
SYMBOL
DESCRIPTION
1
s, b
source
2
d
drain
3g2
gate 2
4g1
gate 1
Fig.1 Simplified outline (SOT343R) and symbol.
Marking code: MF.
handbook, halfpage
MAM192
s,b
d
g
1
g
2
Top view
21
34
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
drain-source voltage
14
V
ID
drain current
30
mA
Ptot
total power dissipation
280
mW
Tj
operating junction temperature
150
°C
yfs
forward transfer admittance
24
28
33
mS
Cig1-s
input capacitance at gate 1
2.2
2.6
pF
Crs
reverse transfer capacitance
f = 1 MHz
25
35
fF
F
noise gure
f = 800 MHz
2
dB
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