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參數(shù)資料
| 型號： | 934051820115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 57K |
| 代理商： | 934051820115 |
2002 Feb 04
3
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846W; BC847W; BC848W
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
BC846W
80
V
BC847W
50
V
BC848W
30
V
VCEO
collector-emitter voltage
open base
BC846W
65
V
BC847W
45
V
BC848W
30
V
VEBO
emitter-base voltage
open collector
BC846W; BC847W
6V
BC848W
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
in free air; note 1
625
K/W
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