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參數(shù)資料
| 型號(hào)： | 934051820115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, EMT3, SC-75, SMPAK-3 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 57K |
| 代理商： | 934051820115 |
2002 Feb 04
4
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846W; BC847W; BC848W
CHARACTERISTICS
Tamb =25 °C; unless otherwise specied.
Note
1. Pulse test: tp ≤ 300 s; δ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector-base cut-off current
VCB =30V; IE =0
15
nA
VCB =30V; IE =0;
Tj = 150 °C
5
A
IEBO
emitter-base cut-off current
VEB =5V; IC =0
100
nA
hFE
DC current gain
IC =10 A; VCE =5V
BC846AW; BC847AW
90
BC846BW; BC847BW; BC848BW
150
BC847CW
270
DC current gain
IC = 2 mA; VCE =5V
BC846W
110
450
BC847W; BC848W
110
800
BC846AW; BC847AW
110
180
220
BC846BW; BC847BW
200
290
450
BC847CW
420
520
800
VCEsat
collector-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
90
250
mV
IC = 100 mA; IB = 5 mA;
note 1
200
600
mV
VBEsat
base-emitter saturation voltage
IC = 10 mA; IB = 0.5 mA
700
mV
IC = 100 mA; IB = 5 mA;
note 1
900
mV
VBE
base-emitter voltage
IC = 2 mA; VCE = 5 V
580
660
700
mV
IC = 10 mA; VCE =5V
770
mV
Cc
collector capacitance
VCB =10V; IE =Ie =0;
f = 1 MHz
3pF
fT
transition frequency
VCE =5V; IC =10mA;
f = 100 MHz
100
MHz
F
noise gure
IC = 200 A; VCE =5V;
RS =2k; f = 1 kHz;
B = 200 Hz
10
dB
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