參數(shù)資料
型號(hào): 934051820115
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 小信號(hào)晶體管
英文描述: 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝: PLASTIC, EMT3, SC-75, SMPAK-3
文件頁(yè)數(shù): 7/8頁(yè)
文件大?。?/td> 57K
代理商: 934051820115
2002 Feb 04
7
Philips Semiconductors
Product specication
NPN general purpose transistors
BC846W; BC847W; BC848W
handbook, halfpage
MGT731
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
hFE
(1)
(2)
(3)
Fig.10 DC current gain as a function of collector
current; typical values.
BC847CW; VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
0
1200
1000
800
600
400
200
MGT732
102
101
110
102
103
IC (mA)
VBE
(mV)
(1)
(2)
(3)
Fig.11 Base-emitter voltage as a function of
collector current; typical values.
BC847CW; VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
104
103
102
10
MGT733
101
110
102
103
IC (mA)
VCEsat
(mV)
(1)
(2)
(3)
Fig.12 Collector-emitter saturation voltage as a
function of collector current; typical values.
BC847CW; IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MGT734
101
110
102
103
IC (mA)
0
1200
1000
800
600
400
200
VBEsat
(mV)
(1)
(2)
(3)
Fig.13 Base-emitter saturation voltage as a
function of collector current; typical values.
BC847CW; IC/IB = 10.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
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