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參數(shù)資料
| 型號： | 934055380112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | SOT-115J, 7 PIN |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 76K |
| 代理商： | 934055380112 |
2001 Nov 01
2
Philips Semiconductors
Product specication
860 MHz, 21.5 dB gain power doubler amplier
BGD906; BGD906MI
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
PINNING - SOT115J
PIN
DESCRIPTION
BGD906
BGD906MI
1
input
output
2, 3
common
5+VB
+VB
7, 8
common
9
output
input
Fig.1 Simplified outline SOT115J.
handbook, halfpage
7
8
9
2
35
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
21.2
21.8
dB
f = 900 MHz
22
23
dB
Itot
total current consumption (DC)
VB =24V; Tmb =35 °C
405
435
mA
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
30
V
Vi
RF input voltage
70
dBmV
Tstg
storage temperature
40
+100
°C
Tmb
operating mounting base temperature
20
+100
°C
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