參數(shù)資料
型號(hào): 934055380112
廠商: NXP SEMICONDUCTORS
元件分類(lèi): 放大器
英文描述: 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁(yè)數(shù): 5/9頁(yè)
文件大?。?/td> 76K
代理商: 934055380112
2001 Nov 01
5
Philips Semiconductors
Product specication
860 MHz, 21.5 dB gain power doubler amplier
BGD906; BGD906MI
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CTB
(dB)
200
50
60
80
90
70
52
48
40
36
44
400
600
800
MGS661
(1)
(2)
(3)
(4)
(2)
(4)
(3)
Fig.2
Composite triple beat as a function of
frequency under tilted conditions.
(1) Vo.
(2) Typ. +3
σ.
ZS =ZL =75 ; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
6 dB offset (550 to 750 MHz).
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
Xmod
(dB)
200
50
60
80
90
70
52
48
40
36
44
400
600
800
MGS662
(1)
(3)
(2)
(4)
(3)
(2)
(4)
Fig.3
Cross modulation as a function of frequency
under tilted conditions.
(1) Vo.
(2) Typ. +3
σ.
ZS =ZL =75 ; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
6 dB offset (550 to 750 MHz).
(3) Typ.
(4) Typ.
3 σ.
handbook, halfpage
0
Vo
(dBmV)
f (MHz)
CSO
(dB)
200
50
60
80
90
70
52
48
40
36
44
400
600
800
MGS663
(1)
(2)
(3)
(4)
(3)
(4)
Fig.4
Composite second order distortion as a
function of frequency under tilted
conditions.
(1) Vo.
(2) Typ. +3
σ.
ZS =ZL =75 ; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at
6 dB offset (550 to 750 MHz).
(3) Typ.
(4) Typ.
3 σ.
相關(guān)PDF資料
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