參數(shù)資料
型號(hào): 934055380112
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁(yè)數(shù): 4/9頁(yè)
文件大?。?/td> 76K
代理商: 934055380112
2001 Nov 01
4
Philips Semiconductors
Product specication
860 MHz, 21.5 dB gain power doubler amplier
BGD906; BGD906MI
CSO
composite second
order distortion
49 chs at; Vo = 47 dBmV; fm = 860.5 MHz
63
59
dB
77 chs at; Vo = 44 dBmV; fm = 548.5 MHz
74
65
dB
110 chs at; Vo = 44 dBmV; fm = 746.5 MHz
66
58
dB
129 chs at; Vo = 44 dBmV; fm = 860.5 MHz
59
54
dB
110 chs; fm = 150 MHz;
Vo = 49 dBmV at 550 MHz; note 1
64
60
dB
129 chs; fm = 150 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
60
54
dB
d2
second order distortion
note 3
83
70
dB
note 4
81.5 73
dB
note 5
79
76
dB
Vo
output voltage
dim = 60 dB; note 6
63.5
64.5
dBmV
dim = 60 dB; note 7
64.5
66.5
dBmV
dim = 60 dB; note 8
66.5
69
dBmV
CTB compression = 1 dB; 129 chs at;
f = 859.25 MHz
48.5
49
dBmV
CSO compression = 1 dB; 129 chs at;
f = 860.5 MHz
51
54
dBmV
NF
noise gure
f = 50 MHz
5
5.5
dB
f = 550 MHz
4.5
5
dB
f = 750 MHz
56dB
f = 900 MHz
6
7.5
dB
Itot
total current
consumption (DC)
note 9
405
420
435
mA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Notes
1. Tilt = 9 dB (50 to 550 MHz)
tilt = 3.5 dB at
6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 805.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 860.5 MHz.
4. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 691.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 746.5 MHz.
5. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 493.25 MHz; Vq = 44 dBmV;
measured at fp +fq = 548.5 MHz.
6. Measured according to DIN45004B:
fp = 851.25 MHz; Vp =Vo;
fq = 858.25 MHz; Vq =Vo 6 dB;
fr = 860.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 849.25 MHz.
7. Measured according to DIN45004B:
fp = 740.25 MHz; Vp =Vo;
fq = 747.25 MHz; Vq =Vo 6 dB;
fr = 749.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 738.25 MHz.
8. Measured according to DIN45004B:
fp = 540.25 MHz; Vp =Vo;
fq = 547.25 MHz; Vq =Vo 6 dB;
fr = 549.25 MHz; Vr =Vo 6 dB;
measured at fp +fq fr = 538.25 MHz.
9. The module normally operates at VB = 24 V, but is
able to withstand supply transients up to 35 V.
相關(guān)PDF資料
PDF描述
934055383112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
05W18 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:PT06; Number of Contacts:26; Connector Shell Size:16; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight
934055384112 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934055384135 UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
934055388112 5 MHz - 120 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
934055512115 制造商:NXP Semiconductors 功能描述:Diode PIN Attenuator/Switch 175V 2-Pin SOD-523 T/R
934055762127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 200V 20A 3-Pin(3+Tab) TO-220AB Tube
934055788118 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 400V 4A 3-Pin(2+Tab) DPAK T/R
934056255127 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 55V 54A 3-Pin(3+Tab) TO-220AB Tube
934056947115 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R