參數(shù)資料
型號: 934055380112
廠商: NXP SEMICONDUCTORS
元件分類: 放大器
英文描述: 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝: SOT-115J, 7 PIN
文件頁數(shù): 3/9頁
文件大?。?/td> 76K
代理商: 934055380112
2001 Nov 01
3
Philips Semiconductors
Product specication
860 MHz, 21.5 dB gain power doubler amplier
BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB = 24 V; Tmb =35 °C; ZS =ZL =75
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 50 MHz
21.2
21.5
21.8
dB
f = 900 MHz
22
22.5
23
dB
SL
slope straight line
f = 40 to 900 MHz
0.5
1
1.5
dB
FL
atness straight line
f = 40 to 900 MHz
±0.35 dB
s11
input return losses
f = 40 to 80 MHz
22
25
dB
f = 80 to 160 MHz
21
24
dB
f = 160 to 320 MHz
18
23
dB
f = 320 to 550 MHz
17
23
dB
f = 550 to 900 MHz
16
20
dB
s22
output return losses
f = 40 to 80 MHz
22
25
dB
f = 80 to 160 MHz
21
25
dB
f = 160 to 320 MHz
20
23
dB
f = 320 to 550 MHz
19
22
dB
f = 550 to 650 MHz
18
24
dB
f = 650 to 750 MHz
17
23
dB
f = 750 to 900 MHz
16
21
dB
s21
phase response
f = 50 MHz
45
+45
deg
CTB
composite triple beat
49 chs at; Vo = 47 dBmV; fm = 859.25 MHz
68.5 66
dB
77 chs at; Vo = 44 dBmV; fm = 547.25 MHz
70
67
dB
110 chs at; Vo = 44 dBmV; fm = 745.25 MHz 63
61
dB
129 chs at; Vo = 44 dBmV; fm = 859.25 MHz 59
57
dB
110 chs; fm = 397.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
62.5 60.5 dB
129 chs; fm = 697.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
57
54.5 dB
Xmod
cross modulation
49 chs at; Vo = 47 dBmV; fm = 55.25 MHz
64
62
dB
77 chs at; Vo = 44 dBmV; fm = 55.25 MHz
67.5 65
dB
110 chs at; Vo = 44 dBmV; fm = 55.25 MHz
64
61.5 dB
129 chs at; Vo = 44 dBmV; fm = 55.25 MHz
61
60
dB
110 chs; fm = 397.25 MHz;
Vo = 49 dBmV at 550 MHz; note 1
60
58
dB
129 chs; fm = 859.25 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
56.5 55
dB
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