參數(shù)資料
型號(hào): 934055383112
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC PACKAGE-2
文件頁(yè)數(shù): 10/15頁(yè)
文件大?。?/td> 154K
代理商: 934055383112
2003 Feb 27
4
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2045
CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
65
V
VGSth
gate-source threshold voltage
VDS =10V; ID =70mA
1.5
3.5
V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
5
A
IDSX
drain cut-off current
VGS =VGSth +9V; VDS =10V
9
A
IGSS
gate leakage current
VGS = ±15 V; VDS =0
125
nA
gfs
forward transconductance
VDS =10V; ID = 2.5 A
2
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID = 2.5 A
340
m
Ciss
input capacitance
VGS = 0; VDS =26V; f=1MHz
38
pF
Coss
output capacitance
VGS = 0; VDS =26V; f=1MHz
31
pF
Crss
feedback capacitance
VGS = 0; VDS =26V; f=1MHz
1.7
pF
handbook, halfpage
0
Ciss
C
(pF)
VDS (V)
10
20
30
102
10
1
MCD889
Coss
Crss
Fig.2
Input, output and feedback capacitance as
functions of drain-source voltage, typical
values.
VGS = 0; f = 1 MHz.
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