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參數(shù)資料
| 型號： | 934055383112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 12/15頁 |
| 文件大?。?/td> | 154K |
| 代理商： | 934055383112 |
2003 Feb 27
6
Philips Semiconductors
Product specication
UHF power LDMOS transistor
BLF2045
handbook, halfpage
010
50
20
30
40
MCD891
PL (PEP) (W)
dim
(dBc)
0
60
40
20
d3
d5
d7
VDS =26V; IDQ = 180 mA; Th ≤ 25 °C;
f1 = 2000 MHz; f2 = 2000.1 MHz.
Fig.4
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
0
(1)
(2)
10
50
20
30
40
MCD892
PL (PEP) (W)
d3
(dBc)
0
60
40
20
(3)
VDS = 26 V; Th ≤ 25 °C; f1 = 2000 MHz; f2 = 2000.1 MHz.
(1) IDQ = 140 mA.
(2) IDQ = 180 mA.
(3) IDQ = 220 mA.
Fig.5
Intermodulation distortion as a function of
peak envelope load power; typical values.
handbook, halfpage
1.8
1.9
xi
f (GHz)
zi
(
)
2
2.2
5
0
4
2.1
3
2
1
MCD893
ri
Fig.6
Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
Fig.6
Input impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
handbook, halfpage
1.8
1.9
f (GHz)
ZL
(
)
2
2.2
6
4
0
4
6
2
2.1
MCD894
XL
RL
Fig.7
Load impedance as a function of frequency
(series components); typical values.
VDS = 26 V; IDQ = 180 mA; PL = 45 W; Th ≤ 25 °C.
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